%0 Journal Article
%A Niu, Chengwang
%A Buhl, Patrick
%A Bihlmayer, Gustav
%A Wortmann, Daniel
%A Blügel, Stefan
%A Mokrousov, Yuriy
%T Two-Dimensional Topological Crystalline Insulator and Topological Phase Transition in TlSe and TlS Monolayers
%J Nano letters
%V 15
%N 9
%@ 1530-6992
%C Washington, DC
%I ACS Publ.
%M FZJ-2015-06866
%P 6071 - 6075
%D 2015
%X The properties that distinguish topological crystalline insulator (TCI) and topological insulator (TI) rely on crystalline symmetry and time-reversal symmetry, respectively, which encodes different bulk and surface/edge properties. Here, we predict theoretically that electron-doped TlM (M = S and Se) (110) monolayers realize a family of two-dimensional (2D) TCIs characterized by mirror Chern number CM = −2. Remarkably, under uniaxial strain (≈ 1%), a topological phase transition between 2D TCI and 2D TI is revealed with the calculated spin Chern number CS = −1 for the 2D TI. Using spin-resolved edge states analysis, we show different edge-state behaviors, especially at the time reversal invariant points. Finally, a TlBiSe2/NaCl quantum well is proposed to realize an undoped 2D TCI with inverted gap as large as 0.37 eV, indicating the high possibility for room-temperature observation.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000361252700063
%$ pmid:26241305
%R 10.1021/acs.nanolett.5b02299
%U https://juser.fz-juelich.de/record/276427