TY  - JOUR
AU  - Niu, Chengwang
AU  - Buhl, Patrick
AU  - Bihlmayer, Gustav
AU  - Wortmann, Daniel
AU  - Blügel, Stefan
AU  - Mokrousov, Yuriy
TI  - Two-Dimensional Topological Crystalline Insulator and Topological Phase Transition in TlSe and TlS Monolayers
JO  - Nano letters
VL  - 15
IS  - 9
SN  - 1530-6992
CY  - Washington, DC
PB  - ACS Publ.
M1  - FZJ-2015-06866
SP  - 6071 - 6075
PY  - 2015
AB  - The properties that distinguish topological crystalline insulator (TCI) and topological insulator (TI) rely on crystalline symmetry and time-reversal symmetry, respectively, which encodes different bulk and surface/edge properties. Here, we predict theoretically that electron-doped TlM (M = S and Se) (110) monolayers realize a family of two-dimensional (2D) TCIs characterized by mirror Chern number CM = −2. Remarkably, under uniaxial strain (≈ 1%), a topological phase transition between 2D TCI and 2D TI is revealed with the calculated spin Chern number CS = −1 for the 2D TI. Using spin-resolved edge states analysis, we show different edge-state behaviors, especially at the time reversal invariant points. Finally, a TlBiSe2/NaCl quantum well is proposed to realize an undoped 2D TCI with inverted gap as large as 0.37 eV, indicating the high possibility for room-temperature observation.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000361252700063
C6  - pmid:26241305
DO  - DOI:10.1021/acs.nanolett.5b02299
UR  - https://juser.fz-juelich.de/record/276427
ER  -