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@ARTICLE{Wang:276453,
author = {Wang, Shuo and Smirnov, Vladimir and Chen, Tao and Zhang,
Xiaodan and Xiong, Shaozhen and Zhao, Ying and Finger,
Friedhelm},
title = {{T}uning of the open-circuit voltage by wide band-gap
absorber and doped layers in thin film silicon solar cells},
journal = {Physica status solidi / Rapid research letters},
volume = {9},
number = {8},
issn = {1862-6254},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2015-06892},
pages = {453 - 456},
year = {2015},
abstract = {We present an experimental study combined with computer
simulations on the effects of wide band-gap absorber and
window layers on the open-circuit voltage (Voc) in single
junction thin film silicon solar cells. The quantity ΔEp,
taking as the difference between the band gap and the
activation energy in ⟨p⟩ layer, is treated as a measure
of the p-layer properties and shows a linear relation with
Voc over a range of 100 mV with a positive slope of around
430 mV/eV. Two limiting mechanisms of Voc are identified:
the built-in potential at lower ΔEp and the band gap of the
absorber layer at higher ΔEp. The results of the
experimental findings are confirmed by computer
simulations.},
cin = {IEK-5},
ddc = {530},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {121 - Solar cells of the next generation (POF3-121)},
pid = {G:(DE-HGF)POF3-121},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000360382300002},
doi = {10.1002/pssr.201510148},
url = {https://juser.fz-juelich.de/record/276453},
}