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| 001 | 276453 | ||
| 005 | 20240712084534.0 | ||
| 024 | 7 | _ | |2 doi |a 10.1002/pssr.201510148 |
| 024 | 7 | _ | |2 ISSN |a 1862-6254 |
| 024 | 7 | _ | |2 ISSN |a 1862-6270 |
| 024 | 7 | _ | |2 WOS |a WOS:000360382300002 |
| 037 | _ | _ | |a FZJ-2015-06892 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |0 P:(DE-Juel1)156221 |a Wang, Shuo |b 0 |e Corresponding author |
| 245 | _ | _ | |a Tuning of the open-circuit voltage by wide band-gap absorber and doped layers in thin film silicon solar cells |
| 260 | _ | _ | |a Weinheim |b Wiley-VCH |c 2015 |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1448953908_13519 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a We present an experimental study combined with computer simulations on the effects of wide band-gap absorber and window layers on the open-circuit voltage (Voc) in single junction thin film silicon solar cells. The quantity ΔEp, taking as the difference between the band gap and the activation energy in ⟨p⟩ layer, is treated as a measure of the p-layer properties and shows a linear relation with Voc over a range of 100 mV with a positive slope of around 430 mV/eV. Two limiting mechanisms of Voc are identified: the built-in potential at lower ΔEp and the band gap of the absorber layer at higher ΔEp. The results of the experimental findings are confirmed by computer simulations. |
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| 700 | 1 | _ | |0 P:(DE-Juel1)130297 |a Smirnov, Vladimir |b 1 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Chen, Tao |b 2 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Zhang, Xiaodan |b 3 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Xiong, Shaozhen |b 4 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Zhao, Ying |b 5 |
| 700 | 1 | _ | |0 P:(DE-Juel1)130238 |a Finger, Friedhelm |b 6 |
| 773 | _ | _ | |0 PERI:(DE-600)2259465-6 |a 10.1002/pssr.201510148 |g Vol. 9, no. 8, p. 453 - 456 |n 8 |p 453 - 456 |t Physica status solidi / Rapid research letters |v 9 |x 1862-6254 |y 2015 |
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