% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{vandenHurk:279251,
      author       = {van den Hurk, Jan and Menzel, Stephan and Waser, R. and
                      Valov, Ilia},
      title        = {{P}rocesses and {L}imitations during {F}ilament {F}ormation
                      and {D}issolution in {G}e{S} $_{x}$ -based {R}e{RAM}
                      {M}emory {C}ells},
      journal      = {The journal of physical chemistry / C},
      volume       = {119},
      number       = {32},
      issn         = {1932-7455},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2015-07266},
      pages        = {18678 - 18685},
      year         = {2015},
      abstract     = {The SET and RESET switching kinetics of Ag–GeSx-based ECM
                      memory cells are experimentally investigated. The results
                      were qualitatively and quantitatively reproduced by our
                      simulation model, accounting for a tunneling gap between the
                      tip of the growing filament and the active electrode. Key
                      processes are the nucleation, the electron transfer at the
                      interfaces, and ionic hopping in the electrolyte.
                      Current–voltage sweeps and pulse measurements were used to
                      study the switching kinetics with respect to variety of
                      factors like voltage, current, resistance, time, electrolyte
                      thickness, and stoichiometry. Multilevel operations through
                      the adjustability of the ON resistance by current compliance
                      and sweep rate were confirmed. The SET kinetics for low
                      voltages was limited by the nucleation process. SET time and
                      SET voltage strongly depend on the Ag-ion normalized
                      concentration in the electrolyte. The RESET behavior was
                      mostly independent of the current compliance and the ON
                      resistance. However, lower ON resistances require higher
                      RESET currents but at the same time the RESET time was
                      independent of the ON resistance for nearly 2 orders of
                      magnitude. By pulsed measurements of the RESET kinetics two
                      voltage ranges in the RESET time versus RESET voltage
                      behavior were identified for the first time. Limiting
                      factors in these two ranges were found to be the electron
                      transfer and the ion migration for low and high voltages,
                      respectively.},
      cin          = {PGI-7},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000359683800074},
      doi          = {10.1021/acs.jpcc.5b03622},
      url          = {https://juser.fz-juelich.de/record/279251},
}