%0 Journal Article
%A Wouters, Dirk J.
%A Waser, R.
%A Wuttig, Matthias
%T Phase-Change and Redox-Based Resistive Switching Memories
%J Proceedings of the IEEE
%V 103
%N 8
%@ 1558-2256
%C New York, NY [u.a.]
%I Inst.
%M FZJ-2015-07281
%P 1274 - 1288
%D 2015
%X This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be discussed
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000358243500004
%R 10.1109/JPROC.2015.2433311
%U https://juser.fz-juelich.de/record/279266