TY  - JOUR
AU  - Wouters, Dirk J.
AU  - Waser, R.
AU  - Wuttig, Matthias
TI  - Phase-Change and Redox-Based Resistive Switching Memories
JO  - Proceedings of the IEEE
VL  - 103
IS  - 8
SN  - 1558-2256
CY  - New York, NY [u.a.]
PB  - Inst.
M1  - FZJ-2015-07281
SP  - 1274 - 1288
PY  - 2015
AB  - This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be discussed
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000358243500004
DO  - DOI:10.1109/JPROC.2015.2433311
UR  - https://juser.fz-juelich.de/record/279266
ER  -