% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Wouters:279266,
      author       = {Wouters, Dirk J. and Waser, R. and Wuttig, Matthias},
      title        = {{P}hase-{C}hange and {R}edox-{B}ased {R}esistive
                      {S}witching {M}emories},
      journal      = {Proceedings of the IEEE},
      volume       = {103},
      number       = {8},
      issn         = {1558-2256},
      address      = {New York, NY [u.a.]},
      publisher    = {Inst.},
      reportid     = {FZJ-2015-07281},
      pages        = {1274 - 1288},
      year         = {2015},
      abstract     = {This paper addresses the two main resistive switching (RS)
                      memory technologies: phase-change memory (PCM) and
                      redox-based resistive random access memory (ReRAM). It will
                      review the basic concepts, the initial promises, and current
                      state of the art, with focus on possible scaling pathways
                      for low-power operation and dense, true 3-D memory. Recent
                      physical insights and new potential concepts will be
                      discussed},
      cin          = {PGI-7 / PGI-10},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000358243500004},
      doi          = {10.1109/JPROC.2015.2433311},
      url          = {https://juser.fz-juelich.de/record/279266},
}