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100 1 _ |a Wouters, Dirk J.
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245 _ _ |a Phase-Change and Redox-Based Resistive Switching Memories
260 _ _ |a New York, NY [u.a.]
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520 _ _ |a This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be discussed
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700 1 _ |a Wuttig, Matthias
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773 _ _ |a 10.1109/JPROC.2015.2433311
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