% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Skaja:279651,
      author       = {Skaja, Katharina and Bäumer, Christoph and Peters, Oliver
                      and Menzel, Stephan and Moors, Marco and Du, Hongchu and
                      Bornhöfft, Manuel and Schmitz, Christoph and Feyer, Vitaliy
                      and Jia, Chun-Lin and Schneider, Claus Michael and Mayer,
                      Joachim and Waser, Rainer and Dittmann, Regina},
      title        = {{A}valanche-{D}ischarge-{I}nduced {E}lectrical {F}orming in
                      {T}antalum {O}xide-{B}ased {M}etal-{I}nsulator-{M}etal
                      {S}tructures},
      journal      = {Advanced functional materials},
      volume       = {25},
      number       = {46},
      issn         = {1616-301X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2015-07533},
      pages        = {7154–7162},
      year         = {2015},
      abstract     = {Oxide-based metal–insulator–metal structures are of
                      special interest for future resistive random-access
                      memories. In such cells, redox processes on the nanoscale
                      occur during resistive switching, which are initiated by the
                      reversible movement of native donors, such as oxygen
                      vacancies. The formation of these filaments is mainly
                      attributed to an enhanced oxygen diffusion due to Joule
                      heating in an electric field or due to electrical breakdown.
                      Here, the development of a dendrite-like structure, which is
                      induced by an avalanche discharge between the top electrode
                      and the Ta2O5-x layer, is presented, which occurs instead of
                      a local breakdown between top and bottom electrode. The
                      dendrite-like structure evolves primarily at structures with
                      a pronounced interface adsorbate layer. Furthermore, local
                      conductive atomic force microscopy reveals that the entire
                      dendrite region becomes conductive. Via spectromicroscopy it
                      is demonstrated that the subsequent switching is caused by a
                      valence change between Ta4+ and Ta5+, which takes place over
                      the entire former Pt/Ta2O5-x interface of the dendrite-like
                      structure.},
      cin          = {PGI-7 / PGI-5 / PGI-6},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-5-20110106 /
                      I:(DE-Juel1)PGI-6-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000366503700005},
      doi          = {10.1002/adfm.201502767},
      url          = {https://juser.fz-juelich.de/record/279651},
}