000279874 001__ 279874
000279874 005__ 20210129221146.0
000279874 037__ $$aFZJ-2015-07750
000279874 1001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b0$$eCorresponding author$$ufzj
000279874 1112_ $$aIndian Workshop on the Physics of Semiconductor Devices$$cBangalore$$d2015-12-07 - 2015-12-09$$wIndien
000279874 245__ $$aTowards III-nitride nano-LED based single photon emitters: technology and applications
000279874 260__ $$c2015
000279874 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1452685311_2869$$xInvited
000279874 3367_ $$033$$2EndNote$$aConference Paper
000279874 3367_ $$2DataCite$$aOther
000279874 3367_ $$2ORCID$$aLECTURE_SPEECH
000279874 3367_ $$2DRIVER$$aconferenceObject
000279874 3367_ $$2BibTeX$$aINPROCEEDINGS
000279874 520__ $$aSingle photon emitters based on InGaN nano-LEDs (light emitting diodes) have the potential to operate at room temperature. They are therefore the key to enabling future low energy consumption, highly secure and ultrafast optoelectronics. Different technological concepts for emitting sources were developed and will be presented together with their realization. It will be discussed how their wavelength can be tuned for future applications.
000279874 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000279874 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b1
000279874 909CO $$ooai:juser.fz-juelich.de:279874$$pVDB
000279874 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128613$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000279874 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128613$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000279874 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000279874 9141_ $$y2015
000279874 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000279874 920__ $$lyes
000279874 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
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000279874 980__ $$aI:(DE-Juel1)PGI-9-20110106