TY  - CONF
AU  - Hardtdegen, Hilde
AU  - Mikulics, Martin
TI  - Towards III-nitride nano-LED based single photon emitters: technology and applications
M1  - FZJ-2015-07750
PY  - 2015
AB  - Single photon emitters based on InGaN nano-LEDs (light emitting diodes) have the potential to operate at room temperature. They are therefore the key to enabling future low energy consumption, highly secure and ultrafast optoelectronics. Different technological concepts for emitting sources were developed and will be presented together with their realization. It will be discussed how their wavelength can be tuned for future applications.
T2  - Indian Workshop on the Physics of Semiconductor Devices
CY  - 7 Dec 2015 - 9 Dec 2015, Bangalore (Indien)
Y2  - 7 Dec 2015 - 9 Dec 2015
M2  - Bangalore, Indien
LB  - PUB:(DE-HGF)6
UR  - https://juser.fz-juelich.de/record/279874
ER  -