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@INPROCEEDINGS{Hardtdegen:279874,
      author       = {Hardtdegen, Hilde and Mikulics, Martin},
      title        = {{T}owards {III}-nitride nano-{LED} based single photon
                      emitters: technology and applications},
      reportid     = {FZJ-2015-07750},
      year         = {2015},
      abstract     = {Single photon emitters based on InGaN nano-LEDs (light
                      emitting diodes) have the potential to operate at room
                      temperature. They are therefore the key to enabling future
                      low energy consumption, highly secure and ultrafast
                      optoelectronics. Different technological concepts for
                      emitting sources were developed and will be presented
                      together with their realization. It will be discussed how
                      their wavelength can be tuned for future applications.},
      month         = {Dec},
      date          = {2015-12-07},
      organization  = {Indian Workshop on the Physics of
                       Semiconductor Devices, Bangalore
                       (Indien), 7 Dec 2015 - 9 Dec 2015},
      subtyp        = {Invited},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/279874},
}