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| 001 | 279874 | ||
| 005 | 20210129221146.0 | ||
| 037 | _ | _ | |a FZJ-2015-07750 |
| 100 | 1 | _ | |a Hardtdegen, Hilde |0 P:(DE-Juel1)125593 |b 0 |e Corresponding author |u fzj |
| 111 | 2 | _ | |a Indian Workshop on the Physics of Semiconductor Devices |c Bangalore |d 2015-12-07 - 2015-12-09 |w Indien |
| 245 | _ | _ | |a Towards III-nitride nano-LED based single photon emitters: technology and applications |
| 260 | _ | _ | |c 2015 |
| 336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1452685311_2869 |2 PUB:(DE-HGF) |x Invited |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 520 | _ | _ | |a Single photon emitters based on InGaN nano-LEDs (light emitting diodes) have the potential to operate at room temperature. They are therefore the key to enabling future low energy consumption, highly secure and ultrafast optoelectronics. Different technological concepts for emitting sources were developed and will be presented together with their realization. It will be discussed how their wavelength can be tuned for future applications. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
| 700 | 1 | _ | |a Mikulics, Martin |0 P:(DE-Juel1)128613 |b 1 |
| 909 | C | O | |o oai:juser.fz-juelich.de:279874 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)128613 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)128613 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2015 |
| 915 | _ | _ | |a No Authors Fulltext |0 StatID:(DE-HGF)0550 |2 StatID |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a conf |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
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