Hauptseite > Publikationsdatenbank > AXIAL AND RADIAL GROWTH OF GaAs/InSb HETEROSTRUCTURE NANOWIRES > print

001     279881
005     20210129221148.0
037 _ _ |a FZJ-2015-07757
100 1 _ |a Rieger, Torsten
|0 P:(DE-Juel1)141766
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|e Corresponding author
111 2 _ |a 18th European Molecular Beam Epitaxy workshop
|c Canazei
|d 2015-03-15 - 2015-03-18
|w Italy
245 _ _ |a AXIAL AND RADIAL GROWTH OF GaAs/InSb HETEROSTRUCTURE NANOWIRES
260 _ _ |c 2015
336 7 _ |a Poster
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336 7 _ |a Conference Paper
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336 7 _ |a Output Types/Conference Poster
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336 7 _ |a conferenceObject
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336 7 _ |a INPROCEEDINGS
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536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
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700 1 _ |a Lepsa, Mihail Ion
|0 P:(DE-Juel1)128603
|b 1
700 1 _ |a Grützmacher, Detlev
|0 P:(DE-Juel1)125588
|b 2
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910 1 _ |a Forschungszentrum Jülich GmbH
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913 1 _ |a DE-HGF
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|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
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|v Controlling Electron Charge-Based Phenomena
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|4 G:(DE-HGF)POF
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914 1 _ |y 2015
915 _ _ |a No Authors Fulltext
|0 StatID:(DE-HGF)0550
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920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
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980 _ _ |a poster
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980 _ _ |a UNRESTRICTED
980 _ _ |a I:(DE-Juel1)PGI-9-20110106

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