%0 Conference Paper
%A Schulte-Braucks, Christian
%A Richter, Simon
%A Knoll, Lars
%A Selmi, Luca
%A Zhao, Qing-Tai
%A Mantl, Siegfried
%T Experimental demonstration of improved analog device performance in GAA-NW-TFETs
%I IEEE
%M FZJ-2015-07817
%@ 978-1-4799-4378-4
%P 178-181
%D 2014
%X We present experimental data on analog device performance of p-type planar and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs). 10 nm diameter GAA-NW-TFETs reach a maximum transconductance efficiency of 12.7V^−1 which is close to values obtained from simulations. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameter of 20 nm and 10 nm is demonstrated. A maximum transconductance of 122 μS/μm and on-current up to 23 μA/μm at a gate overdrive of Vgt=Vd=−1V were achieved for the GAA-NW-TFETs. Furthermore a good output current-saturation is observed leading to high intrinsic gain up to 217 which is even higher than in 20 nm FinFETs.
%B ESSDERC 2014 - 44th European Solid State Device Research Conference
%C 22 Sep 2014 - 26 Sep 2014, Venice Lido (Italy)
Y2 22 Sep 2014 - 26 Sep 2014
M2 Venice Lido, Italy
%F PUB:(DE-HGF)8
%9 Contribution to a conference proceedings
%R 10.1109/ESSDERC.2014.6948789
%U https://juser.fz-juelich.de/record/280070