TY  - CONF
AU  - Schulte-Braucks, Christian
AU  - Richter, Simon
AU  - Knoll, Lars
AU  - Selmi, Luca
AU  - Zhao, Qing-Tai
AU  - Mantl, Siegfried
TI  - Experimental demonstration of improved analog device performance in GAA-NW-TFETs
PB  - IEEE
M1  - FZJ-2015-07817
SN  - 978-1-4799-4378-4
SP  - 178-181
PY  - 2014
AB  - We present experimental data on analog device performance of p-type planar and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs). 10 nm diameter GAA-NW-TFETs reach a maximum transconductance efficiency of 12.7V^−1 which is close to values obtained from simulations. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameter of 20 nm and 10 nm is demonstrated. A maximum transconductance of 122 μS/μm and on-current up to 23 μA/μm at a gate overdrive of Vgt=Vd=−1V were achieved for the GAA-NW-TFETs. Furthermore a good output current-saturation is observed leading to high intrinsic gain up to 217 which is even higher than in 20 nm FinFETs.
T2  - ESSDERC 2014 - 44th European Solid State Device Research Conference
CY  - 22 Sep 2014 - 26 Sep 2014, Venice Lido (Italy)
Y2  - 22 Sep 2014 - 26 Sep 2014
M2  - Venice Lido, Italy
LB  - PUB:(DE-HGF)8
DO  - DOI:10.1109/ESSDERC.2014.6948789
UR  - https://juser.fz-juelich.de/record/280070
ER  -