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@INPROCEEDINGS{SchulteBraucks:280070,
      author       = {Schulte-Braucks, Christian and Richter, Simon and Knoll,
                      Lars and Selmi, Luca and Zhao, Qing-Tai and Mantl,
                      Siegfried},
      title        = {{E}xperimental demonstration of improved analog device
                      performance in {GAA}-{NW}-{TFET}s},
      publisher    = {IEEE},
      reportid     = {FZJ-2015-07817},
      isbn         = {978-1-4799-4378-4},
      pages        = {178-181},
      year         = {2014},
      abstract     = {We present experimental data on analog device performance
                      of p-type planar and gate all around (GAA) nanowire (NW)
                      Tunnel-FETs (TFETs). 10 nm diameter GAA-NW-TFETs reach a
                      maximum transconductance efficiency of $12.7V^−1$ which is
                      close to values obtained from simulations. A significant
                      improvement of the analog performance by enhancing the
                      electrostatics from planar TFETs to GAA-NW-TFETs with
                      diameter of 20 nm and 10 nm is demonstrated. A maximum
                      transconductance of 122 μS/μm and on-current up to 23
                      μA/μm at a gate overdrive of Vgt=Vd=−1V were achieved
                      for the GAA-NW-TFETs. Furthermore a good output
                      current-saturation is observed leading to high intrinsic
                      gain up to 217 which is even higher than in 20 nm FinFETs.},
      month         = {Sep},
      date          = {2014-09-22},
      organization  = {ESSDERC 2014 - 44th European Solid
                       State Device Research Conference,
                       Venice Lido (Italy), 22 Sep 2014 - 26
                       Sep 2014},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / E2SWITCH - Energy Efficient Tunnel FET Switches
                      and Circuits (619509)},
      pid          = {G:(DE-HGF)POF3-521 / G:(EU-Grant)619509},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/ESSDERC.2014.6948789},
      url          = {https://juser.fz-juelich.de/record/280070},
}