Home > Publications database > Experimental demonstration of improved analog device performance in GAA-NW-TFETs > print

001     280070
005     20210129221208.0
020 _ _ |a 978-1-4799-4378-4
024 7 _ |a 10.1109/ESSDERC.2014.6948789
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037 _ _ |a FZJ-2015-07817
041 _ _ |a English
100 1 _ |a Schulte-Braucks, Christian
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111 2 _ |a ESSDERC 2014 - 44th European Solid State Device Research Conference
|g ESSDERC 2014
|c Venice Lido
|d 2014-09-22 - 2014-09-26
|w Italy
245 _ _ |a Experimental demonstration of improved analog device performance in GAA-NW-TFETs
260 _ _ |c 2014
|b IEEE
300 _ _ |a 178-181
336 7 _ |a Contribution to a conference proceedings
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336 7 _ |a INPROCEEDINGS
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520 _ _ |a We present experimental data on analog device performance of p-type planar and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs). 10 nm diameter GAA-NW-TFETs reach a maximum transconductance efficiency of 12.7V^−1 which is close to values obtained from simulations. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameter of 20 nm and 10 nm is demonstrated. A maximum transconductance of 122 μS/μm and on-current up to 23 μA/μm at a gate overdrive of Vgt=Vd=−1V were achieved for the GAA-NW-TFETs. Furthermore a good output current-saturation is observed leading to high intrinsic gain up to 217 which is even higher than in 20 nm FinFETs.
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536 _ _ |a E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509)
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700 1 _ |a Richter, Simon
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700 1 _ |a Knoll, Lars
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700 1 _ |a Selmi, Luca
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700 1 _ |a Zhao, Qing-Tai
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700 1 _ |a Mantl, Siegfried
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773 _ _ |a 10.1109/ESSDERC.2014.6948789
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914 1 _ |y 2015
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