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@INPROCEEDINGS{Richter:280071,
      author       = {Richter, Simon and Schulte-Braucks, Christian and Knoll,
                      Lars and Luong, Gia Vinh and Schäfer, Anna and Trellenkamp,
                      Stefan and Zhao, Qing-Tai and Mantl, Siegfried},
      title        = {{E}xperimental demonstration of inverter and {NAND}
                      operation in p-{TFET} logic at ultra-low supply voltages
                      down to {VDD} = 0.15 {V}},
      publisher    = {IEEE},
      reportid     = {FZJ-2015-07818},
      pages        = {23-24},
      year         = {2014},
      abstract     = {Tunnel-FETs (TFETs) have been studied extensively as a
                      replacement for MOSFETs in the supply voltage regime below
                      VDD = 0.3 V [1]. Due to the TFET ability for offering
                      inverse subthreshold slopes SS below 60 mV/dec, these
                      devices are promising candidates for power efficient
                      integrated circuits. Extensive research has been carried out
                      on the characteristics of single TFET devices [2][3] and
                      first inverter structures have been realized as
                      demonstration of simple logic circuits [4][5][6]. In this
                      work, we present TFET logic circuits based on
                      gate-all-around (GAA) Si nanowire (NW) array TFETs showing
                      small SS and high Ion of 39 μA/μm at VDD = -1 V. This
                      comparably high performance in Si TFETs was realized by a
                      source formation via silicidation and dopant segregation.
                      Using these devices inverters based on p-TFET logic and for
                      the first time TFET NAND gates are demonstrated
                      experimentally. The logic gates operate at ultra-low supply
                      voltages down to VDD = 0.15 V.},
      month         = {Jun},
      date          = {2014-06-22},
      organization  = {2014 72nd Annual Device Research
                       Conference (DRC), Santa Barbara (CA),
                       22 Jun 2014 - 25 Jun 2014},
      cin          = {PGI-9 / JARA-FIT / PGI-8-PT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-8-PT-20110228},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/DRC.2014.6872281},
      url          = {https://juser.fz-juelich.de/record/280071},
}