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@ARTICLE{Zhao:280072,
      author       = {Zhao, Qing-Tai and Richter, Simon and Schulte-Braucks,
                      Christian and Knoll, Lars and Blaeser, Sebastian and Luong,
                      Gia Vinh and Trellenkamp, Stefan and Schäfer, Anna and
                      Tiedemann, Andreas and Hartmann, Jean-Michel and Bourdelle,
                      Konstantin and Mantl, Siegfried},
      title        = {{S}trained {S}i and {S}i{G}e {N}anowire {T}unnel {FET}s for
                      {L}ogic and {A}nalog {A}pplications},
      journal      = {IEEE journal of the Electron Devices Society},
      volume       = {3},
      number       = {3},
      issn         = {2168-6734},
      address      = {[New York, NY]},
      publisher    = {IEEE},
      reportid     = {FZJ-2015-07819},
      pages        = {103 - 114},
      year         = {2015},
      abstract     = {Guided by the Wentzel-Kramers-Brillouin approximation for
                      band-to-band tunneling (BTBT), various performance boosters
                      for Si TFETs are presented and experimentally verified.
                      Along this line, improvements achieved by the implementation
                      of uniaxial strain in nanowires (NW), the benefits of
                      high-k/metal gates, and newly engineered tunneling junctions
                      as well as the effect of scaling the NW to diameters of 10
                      nm are demonstrated. Specifically, self-aligned ion
                      implantation into the source/drain silicide and dopant
                      segregation has been exploited to achieve steep tunneling
                      junctions with less defects. The obtained devices deliver
                      high on-currents, e.g., gate-all-around (GAA) NW p-TFETs
                      with 10 nm diameter show ID = 64 μA/μm at VDS = VGS - Voff
                      = -1.0 V, and good inverse subthreshold slopes (SS).
                      Tri-gate TFETs reach minimum SS of 30 mV/dec. Dopant
                      segregation helps to minimize the defect density in the
                      junction and thus trap assisted tunneling (TAT) is reduced.
                      Pulsed current-voltage (I-V) measurements have been used to
                      investigate TAT. We could show that scaled NW devices with
                      multigates are less vulnerable to TAT compared to planar
                      devices due to a shorter tunneling path enabled by the
                      inherently good electrostatics. Furthermore, SiGe NW homo-
                      and heterojunction TFETs have been investigated. The
                      advantages of a SiGe/Si heterostructure as compared to a
                      homojunction device are revealed and the effect of line
                      tunneling which results in an increased BTBT generation is
                      demonstrated. It is also shown that complementary strained
                      Si TFET inverters and p-TFET NAND gates can be operated at
                      VDD as low as 0.2 V. This suggests a great potential of
                      TFETs for ultralow power applications. The analysis of GAA
                      NW TFETs for analog applications provided a high
                      transconductance efficiency and large intrinsic gain, even
                      higher than for state-of-the-art 20 nm FinFETs at low
                      voltages.},
      cin          = {PGI-9 / PGI-8-PT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-8-PT-20110228},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / E2SWITCH - Energy Efficient Tunnel FET Switches
                      and Circuits (619509)},
      pid          = {G:(DE-HGF)POF3-521 / G:(EU-Grant)619509},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000369884400005},
      doi          = {10.1109/JEDS.2015.2400371},
      url          = {https://juser.fz-juelich.de/record/280072},
}