000280079 001__ 280079
000280079 005__ 20210129221212.0
000280079 037__ $$aFZJ-2015-07826
000280079 041__ $$aEnglish
000280079 1001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, Christian$$b0$$eCorresponding author
000280079 1112_ $$aInsulating Films on Semiconductors$$cUdine$$d2015-06-30 - 2015-07-02$$gINFOS2015$$wItaly
000280079 245__ $$aHigh-k/metal gate stacks on high Sn content GeSn alloys
000280079 260__ $$c2015
000280079 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1452684503_2870$$xOther
000280079 3367_ $$033$$2EndNote$$aConference Paper
000280079 3367_ $$2DataCite$$aOther
000280079 3367_ $$2ORCID$$aLECTURE_SPEECH
000280079 3367_ $$2DRIVER$$aconferenceObject
000280079 3367_ $$2BibTeX$$aINPROCEEDINGS
000280079 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000280079 536__ $$0G:(EU-Grant)619509$$aE2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509)$$c619509$$fFP7-ICT-2013-11$$x1
000280079 7001_ $$0P:(DE-HGF)0$$aLehndorff, Thomas$$b1
000280079 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b2
000280079 7001_ $$0P:(DE-Juel1)138778$$aWirths, Stephan$$b3
000280079 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b4
000280079 7001_ $$0P:(DE-HGF)0$$aSavenko, Aleksei$$b5
000280079 7001_ $$0P:(DE-Juel1)133840$$aBreuer, Uwe$$b6
000280079 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b7
000280079 7001_ $$0P:(DE-HGF)0$$aHartmann$$b8
000280079 7001_ $$0P:(DE-HGF)0$$aIkonic$$b9
000280079 909CO $$ooai:juser.fz-juelich.de:280079$$pec_fundedresources$$pVDB$$popenaire
000280079 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161530$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000280079 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161247$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000280079 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)138778$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000280079 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128617$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000280079 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)133840$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000280079 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128639$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000280079 9101_ $$0I:(DE-HGF)0$$6P:(DE-HGF)0$$aExternal Institute$$b8$$kExtern
000280079 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000280079 9141_ $$y2015
000280079 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000280079 920__ $$lyes
000280079 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000280079 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000280079 9201_ $$0I:(DE-Juel1)ZEA-3-20090406$$kZEA-3$$lAnalytik$$x2
000280079 980__ $$aconf
000280079 980__ $$aVDB
000280079 980__ $$aUNRESTRICTED
000280079 980__ $$aI:(DE-Juel1)PGI-9-20110106
000280079 980__ $$aI:(DE-82)080009_20140620
000280079 980__ $$aI:(DE-Juel1)ZEA-3-20090406
000280079 981__ $$aI:(DE-Juel1)ZEA-3-20090406