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@INPROCEEDINGS{SchulteBraucks:280079,
      author       = {Schulte-Braucks, Christian and Lehndorff, Thomas and von
                      den Driesch, Nils and Wirths, Stephan and Mussler, Gregor
                      and Savenko, Aleksei and Breuer, Uwe and Tiedemann, Andreas
                      and Hartmann and Ikonic},
      title        = {{H}igh-k/metal gate stacks on high {S}n content {G}e{S}n
                      alloys},
      reportid     = {FZJ-2015-07826},
      year         = {2015},
      month         = {Jun},
      date          = {2015-06-30},
      organization  = {Insulating Films on Semiconductors,
                       Udine (Italy), 30 Jun 2015 - 2 Jul
                       2015},
      subtyp        = {Other},
      cin          = {PGI-9 / JARA-FIT / ZEA-3},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / E2SWITCH - Energy Efficient Tunnel FET Switches
                      and Circuits (619509)},
      pid          = {G:(DE-HGF)POF3-521 / G:(EU-Grant)619509},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/280079},
}