TY  - JOUR
AU  - Marinova, Maya
AU  - Rault, Julien E.
AU  - Gloter, Alexandre
AU  - Nemsak, Slavomir
AU  - Palsson, Gunnar K.
AU  - Rueff, Jean-Pascal
AU  - Fadley, Charles S.
AU  - Carrétéro, Cécile
AU  - Yamada, Hiroyuki
AU  - March, Katia
AU  - Garcia, Vincent
AU  - Fusil, Stéphane
AU  - Barthélémy, Agnès
AU  - Stéphan, Odile
AU  - Colliex, Christian
AU  - Bibes, Manuel
TI  - Depth Profiling Charge Accumulation from a Ferroelectric into a Doped Mott Insulator
JO  - Nano letters
VL  - 15
IS  - 4
SN  - 1530-6992
CY  - Washington, DC
PB  - ACS Publ.
M1  - FZJ-2016-00079
SP  - 2533 - 2541
PY  - 2015
AB  - The electric field control of functional properties is a crucial goal in oxide-based electronics. Nonvolatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here, we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca1–xCexMnO3, thus providing insight on how interface-engineering can enhance these switching effects.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000352750200048
C6  - pmid:25768912
DO  - DOI:10.1021/acs.nanolett.5b00104
UR  - https://juser.fz-juelich.de/record/280290
ER  -