% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Marinova:280290,
      author       = {Marinova, Maya and Rault, Julien E. and Gloter, Alexandre
                      and Nemsak, Slavomir and Palsson, Gunnar K. and Rueff,
                      Jean-Pascal and Fadley, Charles S. and Carrétéro, Cécile
                      and Yamada, Hiroyuki and March, Katia and Garcia, Vincent
                      and Fusil, Stéphane and Barthélémy, Agnès and Stéphan,
                      Odile and Colliex, Christian and Bibes, Manuel},
      title        = {{D}epth {P}rofiling {C}harge {A}ccumulation from a
                      {F}erroelectric into a {D}oped {M}ott {I}nsulator},
      journal      = {Nano letters},
      volume       = {15},
      number       = {4},
      issn         = {1530-6992},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2016-00079},
      pages        = {2533 - 2541},
      year         = {2015},
      abstract     = {The electric field control of functional properties is a
                      crucial goal in oxide-based electronics. Nonvolatile
                      switching between different resistivity or magnetic states
                      in an oxide channel can be achieved through charge
                      accumulation or depletion from an adjacent ferroelectric.
                      However, the way in which charge distributes near the
                      interface between the ferroelectric and the oxide remains
                      poorly known, which limits our understanding of such
                      switching effects. Here, we use a first-of-a-kind
                      combination of scanning transmission electron microscopy
                      with electron energy loss spectroscopy,
                      near-total-reflection hard X-ray photoemission spectroscopy,
                      and ab initio theory to address this issue. We achieve a
                      direct, quantitative, atomic-scale characterization of the
                      polarization-induced charge density changes at the interface
                      between the ferroelectric BiFeO3 and the doped Mott
                      insulator Ca1–xCexMnO3, thus providing insight on how
                      interface-engineering can enhance these switching effects.},
      cin          = {PGI-6},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000352750200048},
      pubmed       = {pmid:25768912},
      doi          = {10.1021/acs.nanolett.5b00104},
      url          = {https://juser.fz-juelich.de/record/280290},
}