%0 Journal Article
%A Pécz, B.
%A Tóth, L.
%A Tsiakatouras, G.
%A Adikimenakis, A.
%A Kovács, A.
%A Duchamp, M.
%A Dunin-Borkowski, Rafal
%A Yakimova, R.
%A Neumann, P. L.
%A Behmenburg, H.
%A Foltynski, B.
%A Giesen, C.
%A Heuken, M.
%A Georgakilas, A.
%T GaN heterostructures with diamond and graphene
%J Semiconductor science and technology
%V 30
%N 11
%@ 1361-6641
%C Bristol
%I IOP Publ.
%M FZJ-2016-00152
%P 114001 -
%D 2015
%X The full performance of GaN devices for high power applications is not exploited due to their self-heating. Possible solutions are the integration of materials with high heat conductivity i.e., single crystalline diamond and graphene layers. We report the growth of single crystalline (0001)-oriented GaN thin films on (100), (110) and (111) diamond single crystals studied by transmission electron microscopy (TEM) in cross-sections. As for graphene, we show a high quality GaN layer that was deposited on patterned graphene layers and 6H-SiC. The atomic structures of the interfaces in the heterostructure are studied using aberration-corrected scanning TEM combined with energy dispersive x-ray and electron energy-loss spectroscopy.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000365240800002
%R 10.1088/0268-1242/30/11/114001
%U https://juser.fz-juelich.de/record/280368