000280368 001__ 280368
000280368 005__ 20240610120700.0
000280368 0247_ $$2doi$$a10.1088/0268-1242/30/11/114001
000280368 0247_ $$2ISSN$$a0268-1242
000280368 0247_ $$2ISSN$$a1361-6641
000280368 0247_ $$2WOS$$aWOS:000365240800002
000280368 037__ $$aFZJ-2016-00152
000280368 082__ $$a530
000280368 1001_ $$0P:(DE-HGF)0$$aPécz, B.$$b0$$eCorresponding author
000280368 245__ $$aGaN heterostructures with diamond and graphene
000280368 260__ $$aBristol$$bIOP Publ.$$c2015
000280368 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1452515133_899
000280368 3367_ $$2DataCite$$aOutput Types/Journal article
000280368 3367_ $$00$$2EndNote$$aJournal Article
000280368 3367_ $$2BibTeX$$aARTICLE
000280368 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000280368 3367_ $$2DRIVER$$aarticle
000280368 520__ $$aThe full performance of GaN devices for high power applications is not exploited due to their self-heating. Possible solutions are the integration of materials with high heat conductivity i.e., single crystalline diamond and graphene layers. We report the growth of single crystalline (0001)-oriented GaN thin films on (100), (110) and (111) diamond single crystals studied by transmission electron microscopy (TEM) in cross-sections. As for graphene, we show a high quality GaN layer that was deposited on patterned graphene layers and 6H-SiC. The atomic structures of the interfaces in the heterostructure are studied using aberration-corrected scanning TEM combined with energy dispersive x-ray and electron energy-loss spectroscopy.
000280368 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0
000280368 588__ $$aDataset connected to CrossRef
000280368 7001_ $$0P:(DE-HGF)0$$aTóth, L.$$b1
000280368 7001_ $$0P:(DE-HGF)0$$aTsiakatouras, G.$$b2
000280368 7001_ $$0P:(DE-HGF)0$$aAdikimenakis, A.$$b3
000280368 7001_ $$0P:(DE-Juel1)144926$$aKovács, A.$$b4
000280368 7001_ $$0P:(DE-Juel1)145413$$aDuchamp, M.$$b5
000280368 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b6
000280368 7001_ $$0P:(DE-HGF)0$$aYakimova, R.$$b7
000280368 7001_ $$0P:(DE-HGF)0$$aNeumann, P. L.$$b8
000280368 7001_ $$0P:(DE-HGF)0$$aBehmenburg, H.$$b9
000280368 7001_ $$0P:(DE-HGF)0$$aFoltynski, B.$$b10
000280368 7001_ $$0P:(DE-HGF)0$$aGiesen, C.$$b11
000280368 7001_ $$0P:(DE-HGF)0$$aHeuken, M.$$b12
000280368 7001_ $$0P:(DE-HGF)0$$aGeorgakilas, A.$$b13
000280368 773__ $$0PERI:(DE-600)1361285-2$$a10.1088/0268-1242/30/11/114001$$gVol. 30, no. 11, p. 114001 -$$n11$$p114001 -$$tSemiconductor science and technology$$v30$$x1361-6641$$y2015
000280368 8564_ $$uhttps://juser.fz-juelich.de/record/280368/files/pdf.pdf$$yRestricted
000280368 8564_ $$uhttps://juser.fz-juelich.de/record/280368/files/pdf.pdf?subformat=pdfa$$xpdfa$$yRestricted
000280368 909CO $$ooai:juser.fz-juelich.de:280368$$pVDB
000280368 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)144926$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000280368 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145413$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000280368 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)144121$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000280368 9131_ $$0G:(DE-HGF)POF3-143$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000280368 9141_ $$y2015
000280368 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000280368 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bSEMICOND SCI TECH : 2014
000280368 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000280368 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000280368 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000280368 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000280368 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000280368 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000280368 915__ $$0StatID:(DE-HGF)0430$$2StatID$$aNational-Konsortium
000280368 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000280368 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000280368 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000280368 920__ $$lyes
000280368 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x0
000280368 980__ $$ajournal
000280368 980__ $$aVDB
000280368 980__ $$aUNRESTRICTED
000280368 980__ $$aI:(DE-Juel1)PGI-5-20110106
000280368 981__ $$aI:(DE-Juel1)ER-C-1-20170209