TY  - JOUR
AU  - Pécz, B.
AU  - Tóth, L.
AU  - Tsiakatouras, G.
AU  - Adikimenakis, A.
AU  - Kovács, A.
AU  - Duchamp, M.
AU  - Dunin-Borkowski, Rafal
AU  - Yakimova, R.
AU  - Neumann, P. L.
AU  - Behmenburg, H.
AU  - Foltynski, B.
AU  - Giesen, C.
AU  - Heuken, M.
AU  - Georgakilas, A.
TI  - GaN heterostructures with diamond and graphene
JO  - Semiconductor science and technology
VL  - 30
IS  - 11
SN  - 1361-6641
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2016-00152
SP  - 114001 -
PY  - 2015
AB  - The full performance of GaN devices for high power applications is not exploited due to their self-heating. Possible solutions are the integration of materials with high heat conductivity i.e., single crystalline diamond and graphene layers. We report the growth of single crystalline (0001)-oriented GaN thin films on (100), (110) and (111) diamond single crystals studied by transmission electron microscopy (TEM) in cross-sections. As for graphene, we show a high quality GaN layer that was deposited on patterned graphene layers and 6H-SiC. The atomic structures of the interfaces in the heterostructure are studied using aberration-corrected scanning TEM combined with energy dispersive x-ray and electron energy-loss spectroscopy.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000365240800002
DO  - DOI:10.1088/0268-1242/30/11/114001
UR  - https://juser.fz-juelich.de/record/280368
ER  -