% IMPORTANT: The following is UTF-8 encoded. This means that in the presence % of non-ASCII characters, it will not work with BibTeX 0.99 or older. % Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or % “biber”. @ARTICLE{Pcz:280368, author = {Pécz, B. and Tóth, L. and Tsiakatouras, G. and Adikimenakis, A. and Kovács, A. and Duchamp, M. and Dunin-Borkowski, Rafal and Yakimova, R. and Neumann, P. L. and Behmenburg, H. and Foltynski, B. and Giesen, C. and Heuken, M. and Georgakilas, A.}, title = {{G}a{N} heterostructures with diamond and graphene}, journal = {Semiconductor science and technology}, volume = {30}, number = {11}, issn = {1361-6641}, address = {Bristol}, publisher = {IOP Publ.}, reportid = {FZJ-2016-00152}, pages = {114001 -}, year = {2015}, abstract = {The full performance of GaN devices for high power applications is not exploited due to their self-heating. Possible solutions are the integration of materials with high heat conductivity i.e., single crystalline diamond and graphene layers. We report the growth of single crystalline (0001)-oriented GaN thin films on (100), (110) and (111) diamond single crystals studied by transmission electron microscopy (TEM) in cross-sections. As for graphene, we show a high quality GaN layer that was deposited on patterned graphene layers and 6H-SiC. The atomic structures of the interfaces in the heterostructure are studied using aberration-corrected scanning TEM combined with energy dispersive x-ray and electron energy-loss spectroscopy.}, cin = {PGI-5}, ddc = {530}, cid = {I:(DE-Juel1)PGI-5-20110106}, pnm = {143 - Controlling Configuration-Based Phenomena (POF3-143)}, pid = {G:(DE-HGF)POF3-143}, typ = {PUB:(DE-HGF)16}, UT = {WOS:000365240800002}, doi = {10.1088/0268-1242/30/11/114001}, url = {https://juser.fz-juelich.de/record/280368}, }