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@ARTICLE{Pcz:280368,
author = {Pécz, B. and Tóth, L. and Tsiakatouras, G. and
Adikimenakis, A. and Kovács, A. and Duchamp, M. and
Dunin-Borkowski, Rafal and Yakimova, R. and Neumann, P. L.
and Behmenburg, H. and Foltynski, B. and Giesen, C. and
Heuken, M. and Georgakilas, A.},
title = {{G}a{N} heterostructures with diamond and graphene},
journal = {Semiconductor science and technology},
volume = {30},
number = {11},
issn = {1361-6641},
address = {Bristol},
publisher = {IOP Publ.},
reportid = {FZJ-2016-00152},
pages = {114001 -},
year = {2015},
abstract = {The full performance of GaN devices for high power
applications is not exploited due to their self-heating.
Possible solutions are the integration of materials with
high heat conductivity i.e., single crystalline diamond and
graphene layers. We report the growth of single crystalline
(0001)-oriented GaN thin films on (100), (110) and (111)
diamond single crystals studied by transmission electron
microscopy (TEM) in cross-sections. As for graphene, we show
a high quality GaN layer that was deposited on patterned
graphene layers and 6H-SiC. The atomic structures of the
interfaces in the heterostructure are studied using
aberration-corrected scanning TEM combined with energy
dispersive x-ray and electron energy-loss spectroscopy.},
cin = {PGI-5},
ddc = {530},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
pid = {G:(DE-HGF)POF3-143},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000365240800002},
doi = {10.1088/0268-1242/30/11/114001},
url = {https://juser.fz-juelich.de/record/280368},
}