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| 001 | 280368 | ||
| 005 | 20240610120700.0 | ||
| 024 | 7 | _ | |a 10.1088/0268-1242/30/11/114001 |2 doi |
| 024 | 7 | _ | |a 0268-1242 |2 ISSN |
| 024 | 7 | _ | |a 1361-6641 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2016-00152 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Pécz, B. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a GaN heterostructures with diamond and graphene |
| 260 | _ | _ | |a Bristol |c 2015 |b IOP Publ. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1452515133_899 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a The full performance of GaN devices for high power applications is not exploited due to their self-heating. Possible solutions are the integration of materials with high heat conductivity i.e., single crystalline diamond and graphene layers. We report the growth of single crystalline (0001)-oriented GaN thin films on (100), (110) and (111) diamond single crystals studied by transmission electron microscopy (TEM) in cross-sections. As for graphene, we show a high quality GaN layer that was deposited on patterned graphene layers and 6H-SiC. The atomic structures of the interfaces in the heterostructure are studied using aberration-corrected scanning TEM combined with energy dispersive x-ray and electron energy-loss spectroscopy. |
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| 700 | 1 | _ | |a Tóth, L. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Tsiakatouras, G. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Adikimenakis, A. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Kovács, A. |0 P:(DE-Juel1)144926 |b 4 |
| 700 | 1 | _ | |a Duchamp, M. |0 P:(DE-Juel1)145413 |b 5 |
| 700 | 1 | _ | |a Dunin-Borkowski, Rafal |0 P:(DE-Juel1)144121 |b 6 |
| 700 | 1 | _ | |a Yakimova, R. |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Neumann, P. L. |0 P:(DE-HGF)0 |b 8 |
| 700 | 1 | _ | |a Behmenburg, H. |0 P:(DE-HGF)0 |b 9 |
| 700 | 1 | _ | |a Foltynski, B. |0 P:(DE-HGF)0 |b 10 |
| 700 | 1 | _ | |a Giesen, C. |0 P:(DE-HGF)0 |b 11 |
| 700 | 1 | _ | |a Heuken, M. |0 P:(DE-HGF)0 |b 12 |
| 700 | 1 | _ | |a Georgakilas, A. |0 P:(DE-HGF)0 |b 13 |
| 773 | _ | _ | |a 10.1088/0268-1242/30/11/114001 |g Vol. 30, no. 11, p. 114001 - |0 PERI:(DE-600)1361285-2 |n 11 |p 114001 - |t Semiconductor science and technology |v 30 |y 2015 |x 1361-6641 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/280368/files/pdf.pdf |y Restricted |
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