% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Trpanc:280561,
      author       = {Tırpancı, Şaban and Bürgler, Daniel E. and Schneider,
                      Claus M. and Rameev, Bulat and Aktaş, Bekir},
      title        = {{C}harging effect reduction in electron beam lithography
                      and observation of single nanopillars on highly insulating
                      substrates},
      journal      = {Microelectronic engineering},
      volume       = {140},
      issn         = {0167-9317},
      address      = {[S.l.] @},
      publisher    = {Elsevier},
      reportid     = {FZJ-2016-00329},
      pages        = {33 - 37},
      year         = {2015},
      abstract     = {Electron beam writing and imaging of nanoscale structures
                      on highly insulating substrates severely suffer from
                      charging effects, which cause reduction in pattern
                      resolution, positioning precision, and imaging quality.
                      Conductive layers deposited above or below the resist layer
                      can effectively reduce charge accumulation, but often give
                      rise to contamination impairing the physical and chemical
                      properties of functional nanostructures. Here we deal with
                      top and bottom contacted, sub-micron-sized nanopillars made
                      from multilayer stacks comprising ferromagnetic and
                      non-magnetic materials for the study of current-induced
                      magnetization dynamics. We show how the charging effects in
                      a previously established fabrication process for
                      single-crystalline nanopillars by H. Dassow et al. (2006)
                      [1] can be significantly reduced by using the bottom
                      electrode layer as charge dissipater and only isolating and
                      disconnecting the bottom electrodes from ground after the
                      fabrication of the delicate nanopillar structure by electron
                      beam lithography. The modified process is successfully
                      applied to Co2MnSi/Ag/Co2MnSi(001) multilayer stacks grown
                      on highly insulating MgO substrates. Ellipsoidal nanopillars
                      with a cross-section of 75 × 120 nm2 reveal $2\%$ giant
                      magnetoresistance and angular dependent magnetization
                      behavior due to the magnetic anisotropy of the elliptical
                      nanomagnets.},
      cin          = {PGI-6},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000358269600007},
      doi          = {10.1016/j.mee.2015.05.007},
      url          = {https://juser.fz-juelich.de/record/280561},
}