%0 Journal Article
%A Ding, Kaining
%A Pomaska, Manuel
%A Singh, Aryak
%A Lentz, Florian
%A Finger, Friedhelm
%A Rau, Uwe
%T Mechanism for crystalline Si surface passivation by the combination of SiO$_{2}$ tunnel oxide and µc-SiC:H thin film
%J Physica status solidi / Rapid research letters
%V 10
%N 3
%@ 1862-6254
%C Weinheim
%I Wiley-VCH
%M FZJ-2016-00404
%P 233 – 236
%D 2016
%X This work demonstrates that the combination of a wet-chemically grown SiO2 tunnel oxide with a highly-doped microcrystalline silicon carbide layer grown by hot-wire chemical vapor deposition yields an excellent surface passivation for phosphorous-doped crystalline silicon (c-Si) wafers. We find effective minority carrier lifetimes of well above 6 ms by introducing this stack. We investigated its c-Si surface passivation mechanism in a systematic study combined with the comparison to a phosphorous-doped polycrystalline-Si (pc-Si)/SiO2 stack. In both cases, field effect passivation by the n-doping of either the µc-SiC:H or the pc-Si is effective. Hydrogen passivation during µc-SiC:H growth plays an important role for the µc-SiC:H/SiO2 combination, whereas phosphorous in-diffusion into the SiO2 and the c-Si is operative for the surface passivation via the Pc-Si/SiO2 stack. The high transparency and conductivity of the µc-SiC:H layer, a low thermal budget and number of processes needed to form the stack, and the excellent c-Si surface passivation quality are advantageous features of µc-SiC:H/SiO2 that can be beneficial for c-Si solar cells.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000373119300005
%R 10.1002/pssr.201510376
%U https://juser.fz-juelich.de/record/280639