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000280639 1001_ $$0P:(DE-Juel1)130233$$aDing, Kaining$$b0$$eCorresponding author
000280639 245__ $$aMechanism for crystalline Si surface passivation by the combination of SiO$_{2}$ tunnel oxide and µc-SiC:H thin film
000280639 260__ $$aWeinheim$$bWiley-VCH$$c2016
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000280639 520__ $$aThis work demonstrates that the combination of a wet-chemically grown SiO2 tunnel oxide with a highly-doped microcrystalline silicon carbide layer grown by hot-wire chemical vapor deposition yields an excellent surface passivation for phosphorous-doped crystalline silicon (c-Si) wafers. We find effective minority carrier lifetimes of well above 6 ms by introducing this stack. We investigated its c-Si surface passivation mechanism in a systematic study combined with the comparison to a phosphorous-doped polycrystalline-Si (pc-Si)/SiO2 stack. In both cases, field effect passivation by the n-doping of either the µc-SiC:H or the pc-Si is effective. Hydrogen passivation during µc-SiC:H growth plays an important role for the µc-SiC:H/SiO2 combination, whereas phosphorous in-diffusion into the SiO2 and the c-Si is operative for the surface passivation via the Pc-Si/SiO2 stack. The high transparency and conductivity of the µc-SiC:H layer, a low thermal budget and number of processes needed to form the stack, and the excellent c-Si surface passivation quality are advantageous features of µc-SiC:H/SiO2 that can be beneficial for c-Si solar cells.
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000280639 7001_ $$0P:(DE-Juel1)162141$$aPomaska, Manuel$$b1
000280639 7001_ $$0P:(DE-Juel1)164370$$aSingh, Aryak$$b2
000280639 7001_ $$0P:(DE-Juel1)130795$$aLentz, Florian$$b3
000280639 7001_ $$0P:(DE-Juel1)130238$$aFinger, Friedhelm$$b4
000280639 7001_ $$0P:(DE-Juel1)143905$$aRau, Uwe$$b5
000280639 773__ $$0PERI:(DE-600)2259465-6$$a10.1002/pssr.201510376$$gVol. 9999, no. 9999, p. n/a - n/a$$n3$$p233 – 236$$tPhysica status solidi / Rapid research letters$$v10$$x1862-6254$$y2016
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