TY  - JOUR
AU  - Ding, Kaining
AU  - Pomaska, Manuel
AU  - Singh, Aryak
AU  - Lentz, Florian
AU  - Finger, Friedhelm
AU  - Rau, Uwe
TI  - Mechanism for crystalline Si surface passivation by the combination of SiO$_{2}$ tunnel oxide and µc-SiC:H thin film
JO  - Physica status solidi / Rapid research letters
VL  - 10
IS  - 3
SN  - 1862-6254
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2016-00404
SP  - 233 – 236
PY  - 2016
AB  - This work demonstrates that the combination of a wet-chemically grown SiO2 tunnel oxide with a highly-doped microcrystalline silicon carbide layer grown by hot-wire chemical vapor deposition yields an excellent surface passivation for phosphorous-doped crystalline silicon (c-Si) wafers. We find effective minority carrier lifetimes of well above 6 ms by introducing this stack. We investigated its c-Si surface passivation mechanism in a systematic study combined with the comparison to a phosphorous-doped polycrystalline-Si (pc-Si)/SiO2 stack. In both cases, field effect passivation by the n-doping of either the µc-SiC:H or the pc-Si is effective. Hydrogen passivation during µc-SiC:H growth plays an important role for the µc-SiC:H/SiO2 combination, whereas phosphorous in-diffusion into the SiO2 and the c-Si is operative for the surface passivation via the Pc-Si/SiO2 stack. The high transparency and conductivity of the µc-SiC:H layer, a low thermal budget and number of processes needed to form the stack, and the excellent c-Si surface passivation quality are advantageous features of µc-SiC:H/SiO2 that can be beneficial for c-Si solar cells.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000373119300005
DO  - DOI:10.1002/pssr.201510376
UR  - https://juser.fz-juelich.de/record/280639
ER  -