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@ARTICLE{Ding:280639,
      author       = {Ding, Kaining and Pomaska, Manuel and Singh, Aryak and
                      Lentz, Florian and Finger, Friedhelm and Rau, Uwe},
      title        = {{M}echanism for crystalline {S}i surface passivation by the
                      combination of {S}i{O}$_{2}$ tunnel oxide and
                      µc-{S}i{C}:{H} thin film},
      journal      = {Physica status solidi / Rapid research letters},
      volume       = {10},
      number       = {3},
      issn         = {1862-6254},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2016-00404},
      pages        = {233 – 236},
      year         = {2016},
      abstract     = {This work demonstrates that the combination of a
                      wet-chemically grown SiO2 tunnel oxide with a highly-doped
                      microcrystalline silicon carbide layer grown by hot-wire
                      chemical vapor deposition yields an excellent surface
                      passivation for phosphorous-doped crystalline silicon (c-Si)
                      wafers. We find effective minority carrier lifetimes of well
                      above 6 ms by introducing this stack. We investigated its
                      c-Si surface passivation mechanism in a systematic study
                      combined with the comparison to a phosphorous-doped
                      polycrystalline-Si (pc-Si)/SiO2 stack. In both cases, field
                      effect passivation by the n-doping of either the µc-SiC:H
                      or the pc-Si is effective. Hydrogen passivation during
                      µc-SiC:H growth plays an important role for the
                      µc-SiC:H/SiO2 combination, whereas phosphorous in-diffusion
                      into the SiO2 and the c-Si is operative for the surface
                      passivation via the Pc-Si/SiO2 stack. The high transparency
                      and conductivity of the µc-SiC:H layer, a low thermal
                      budget and number of processes needed to form the stack, and
                      the excellent c-Si surface passivation quality are
                      advantageous features of µc-SiC:H/SiO2 that can be
                      beneficial for c-Si solar cells.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000373119300005},
      doi          = {10.1002/pssr.201510376},
      url          = {https://juser.fz-juelich.de/record/280639},
}