000280706 001__ 280706
000280706 005__ 20240712084455.0
000280706 0247_ $$2doi$$a10.1016/j.surfcoat.2015.09.016
000280706 0247_ $$2ISSN$$a0257-8972
000280706 0247_ $$2ISSN$$a1879-3347
000280706 0247_ $$2WOS$$aWOS:000376834700018
000280706 037__ $$aFZJ-2016-00463
000280706 082__ $$a620
000280706 1001_ $$0P:(DE-Juel1)162140$$aRichter, Alexei$$b0$$eCorresponding author
000280706 245__ $$aNano-composite microstructure model for the classification of hydrogenated nanocrystalline silicon oxide thin films
000280706 260__ $$aAmsterdam [u.a.]$$bElsevier Science$$c2016
000280706 3367_ $$2DRIVER$$aarticle
000280706 3367_ $$2DataCite$$aOutput Types/Journal article
000280706 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1463985029_8466
000280706 3367_ $$2BibTeX$$aARTICLE
000280706 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000280706 3367_ $$00$$2EndNote$$aJournal Article
000280706 520__ $$aThe unique microstructure of nanocrystalline silicon oxide (nc-SiOX:H) thin films results in excellent optoelectronic properties that can be tuned in a wide range to fulfill the requirements of the specific application. For photovoltaic applications, this material is used as doped layers in silicon heterojunction solar cells and intermediate reflectors in multijunction thin-film solar cell. In this paper, we present a microstructure model based on a large number of n- and p-doped nc-SiOX:H films that were deposited under various deposition pressures, plasma powers, plasma frequencies and gas mixtures. This model is meant to provide guidelines for the systematic classification of the complex material system nc-SiOX:H by establishing a link between the structure of the deposited films and the optoelectronic performance of nc-SiOX:H. Based on this model, the deposition of nc-SiOX:H films can be divided into four characteristic regions: (i) fully amorphous region, (ii) onset of nc-Si formation, (iii) oxygen and nc-Si enrichment region, and (iv) deterioration of nc-Si. According to our microstructure model, an optimal phase composition with respect to the optoelectronic performance can be achieved with a high amount of highly conductive nc-Si percolation paths embedded in an oxygen rich a-SiOX:H matrix.
000280706 536__ $$0G:(DE-HGF)POF3-121$$a121 - Solar cells of the next generation (POF3-121)$$cPOF3-121$$fPOF III$$x0
000280706 536__ $$0G:(DE-Juel1)HITEC-20170406$$aHITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406)$$cHITEC-20170406$$x1
000280706 588__ $$aDataset connected to CrossRef
000280706 7001_ $$0P:(DE-Juel1)159406$$aZhao, Lei$$b1
000280706 7001_ $$0P:(DE-Juel1)130238$$aFinger, Friedhelm$$b2
000280706 7001_ $$0P:(DE-Juel1)130233$$aDing, Kaining$$b3
000280706 773__ $$0PERI:(DE-600)1502240-7$$a10.1016/j.surfcoat.2015.09.016$$gp. S0257897215302541$$p119–124$$tSurface and coatings technology$$v295$$x0257-8972$$y2016
000280706 8564_ $$uhttps://juser.fz-juelich.de/record/280706/files/1-s2.0-S0257897215302541-main.pdf$$yRestricted
000280706 8564_ $$uhttps://juser.fz-juelich.de/record/280706/files/1-s2.0-S0257897215302541-main.gif?subformat=icon$$xicon$$yRestricted
000280706 8564_ $$uhttps://juser.fz-juelich.de/record/280706/files/1-s2.0-S0257897215302541-main.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000280706 8564_ $$uhttps://juser.fz-juelich.de/record/280706/files/1-s2.0-S0257897215302541-main.jpg?subformat=icon-180$$xicon-180$$yRestricted
000280706 8564_ $$uhttps://juser.fz-juelich.de/record/280706/files/1-s2.0-S0257897215302541-main.jpg?subformat=icon-640$$xicon-640$$yRestricted
000280706 8564_ $$uhttps://juser.fz-juelich.de/record/280706/files/1-s2.0-S0257897215302541-main.pdf?subformat=pdfa$$xpdfa$$yRestricted
000280706 909CO $$ooai:juser.fz-juelich.de:280706$$pVDB
000280706 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)162140$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000280706 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130238$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000280706 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130233$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000280706 9131_ $$0G:(DE-HGF)POF3-121$$1G:(DE-HGF)POF3-120$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lErneuerbare Energien$$vSolar cells of the next generation$$x0
000280706 9141_ $$y2016
000280706 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000280706 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000280706 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bSURF COAT TECH : 2014
000280706 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000280706 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000280706 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000280706 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000280706 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000280706 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000280706 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000280706 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000280706 920__ $$lyes
000280706 9201_ $$0I:(DE-Juel1)IEK-5-20101013$$kIEK-5$$lPhotovoltaik$$x0
000280706 980__ $$ajournal
000280706 980__ $$aVDB
000280706 980__ $$aUNRESTRICTED
000280706 980__ $$aI:(DE-Juel1)IEK-5-20101013
000280706 981__ $$aI:(DE-Juel1)IMD-3-20101013