% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Richter:280706,
      author       = {Richter, Alexei and Zhao, Lei and Finger, Friedhelm and
                      Ding, Kaining},
      title        = {{N}ano-composite microstructure model for the
                      classification of hydrogenated nanocrystalline silicon oxide
                      thin films},
      journal      = {Surface and coatings technology},
      volume       = {295},
      issn         = {0257-8972},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2016-00463},
      pages        = {119–124},
      year         = {2016},
      abstract     = {The unique microstructure of nanocrystalline silicon oxide
                      (nc-SiOX:H) thin films results in excellent optoelectronic
                      properties that can be tuned in a wide range to fulfill the
                      requirements of the specific application. For photovoltaic
                      applications, this material is used as doped layers in
                      silicon heterojunction solar cells and intermediate
                      reflectors in multijunction thin-film solar cell. In this
                      paper, we present a microstructure model based on a large
                      number of n- and p-doped nc-SiOX:H films that were deposited
                      under various deposition pressures, plasma powers, plasma
                      frequencies and gas mixtures. This model is meant to provide
                      guidelines for the systematic classification of the complex
                      material system nc-SiOX:H by establishing a link between the
                      structure of the deposited films and the optoelectronic
                      performance of nc-SiOX:H. Based on this model, the
                      deposition of nc-SiOX:H films can be divided into four
                      characteristic regions: (i) fully amorphous region, (ii)
                      onset of nc-Si formation, (iii) oxygen and nc-Si enrichment
                      region, and (iv) deterioration of nc-Si. According to our
                      microstructure model, an optimal phase composition with
                      respect to the optoelectronic performance can be achieved
                      with a high amount of highly conductive nc-Si percolation
                      paths embedded in an oxygen rich a-SiOX:H matrix.},
      cin          = {IEK-5},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000376834700018},
      doi          = {10.1016/j.surfcoat.2015.09.016},
      url          = {https://juser.fz-juelich.de/record/280706},
}