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000280837 1001_ $$0P:(DE-HGF)0$$aWadley, P.$$b0$$eCorresponding author
000280837 245__ $$aElectrical switching of an antiferromagnet
000280837 260__ $$aWashington, DC [u.a.]$$bAmerican Association for the Advancement of Science64196$$c2016
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000280837 520__ $$aAntiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating current-induced internal fields whose sign alternates with the periodicity of the antiferromagnetic lattice. Using these fields, which couple strongly to the antiferromagnetic order, we demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 106 ampere per square centimeter. Electrical writing is combined in our solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.
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000280837 536__ $$0G:(DE-Juel1)jiff13_20131101$$aMagnetic Anisotropy of Metallic Layered Systems and Nanostructures (jiff13_20131101)$$cjiff13_20131101$$fMagnetic Anisotropy of Metallic Layered Systems and Nanostructures$$x1
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000280837 7001_ $$0P:(DE-HGF)0$$aHills, V.$$b4
000280837 7001_ $$0P:(DE-HGF)0$$aCampion, R. P.$$b5
000280837 7001_ $$0P:(DE-HGF)0$$aNovak, V.$$b6
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000280837 7001_ $$0P:(DE-HGF)0$$aMartin, S. Y.$$b10
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