TY  - JOUR
AU  - Wadley, P.
AU  - Howells, B.
AU  - Zelezny, J.
AU  - Andrews, C.
AU  - Hills, V.
AU  - Campion, R. P.
AU  - Novak, V.
AU  - Olejnik, K.
AU  - Maccherozzi, F.
AU  - Dhesi, S. S.
AU  - Martin, S. Y.
AU  - Wagner, T.
AU  - Wunderlich, J.
AU  - Freimuth, F.
AU  - Mokrousov, Y.
AU  - Kunes, J. S.
AU  - Chauhan, J. S.
AU  - Grzybowski, M. J.
AU  - Rushforth, A. W.
AU  - Edmonds, K. W.
AU  - Gallagher, B. L.
AU  - Jungwirth, T.
TI  - Electrical switching of an antiferromagnet
JO  - Science
VL  - 351
IS  - 6273
SN  - 1095-9203
CY  - Washington, DC [u.a.]
PB  - American Association for the Advancement of Science64196
M1  - FZJ-2016-00558
SP  - 587-590
PY  - 2016
AB  - Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating current-induced internal fields whose sign alternates with the periodicity of the antiferromagnetic lattice. Using these fields, which couple strongly to the antiferromagnetic order, we demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 106 ampere per square centimeter. Electrical writing is combined in our solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000369291600036
C6  - pmid:26841431
DO  - DOI:10.1126/science.aab1031
UR  - https://juser.fz-juelich.de/record/280837
ER  -