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@ARTICLE{Wadley:280837,
      author       = {Wadley, P. and Howells, B. and Zelezny, J. and Andrews, C.
                      and Hills, V. and Campion, R. P. and Novak, V. and Olejnik,
                      K. and Maccherozzi, F. and Dhesi, S. S. and Martin, S. Y.
                      and Wagner, T. and Wunderlich, J. and Freimuth, F. and
                      Mokrousov, Y. and Kunes, J. S. and Chauhan, J. S. and
                      Grzybowski, M. J. and Rushforth, A. W. and Edmonds, K. W.
                      and Gallagher, B. L. and Jungwirth, T.},
      title        = {{E}lectrical switching of an antiferromagnet},
      journal      = {Science},
      volume       = {351},
      number       = {6273},
      issn         = {1095-9203},
      address      = {Washington, DC [u.a.]},
      publisher    = {American Association for the Advancement of Science64196},
      reportid     = {FZJ-2016-00558},
      pages        = {587-590},
      year         = {2016},
      abstract     = {Antiferromagnets are hard to control by external magnetic
                      fields because of the alternating directions of magnetic
                      moments on individual atoms and the resulting zero net
                      magnetization. However, relativistic quantum mechanics
                      allows for generating current-induced internal fields whose
                      sign alternates with the periodicity of the
                      antiferromagnetic lattice. Using these fields, which couple
                      strongly to the antiferromagnetic order, we demonstrate
                      room-temperature electrical switching between stable
                      configurations in antiferromagnetic CuMnAs thin-film devices
                      by applied current with magnitudes of order 106 ampere per
                      square centimeter. Electrical writing is combined in our
                      solid-state memory with electrical readout and the stored
                      magnetic state is insensitive to and produces no external
                      magnetic field perturbations, which illustrates the unique
                      merits of antiferromagnets for spintronics.},
      cin          = {IAS-1 / PGI-1 / JARA-HPC},
      ddc          = {500},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) /
                      Magnetic Anisotropy of Metallic Layered Systems and
                      Nanostructures $(jiff13_20131101)$},
      pid          = {G:(DE-HGF)POF3-142 / $G:(DE-Juel1)jiff13_20131101$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000369291600036},
      pubmed       = {pmid:26841431},
      doi          = {10.1126/science.aab1031},
      url          = {https://juser.fz-juelich.de/record/280837},
}