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| 100 | 1 | _ | |a Lübben, Michael |0 P:(DE-Juel1)162283 |b 0 |
| 245 | _ | _ | |a Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaO x Based Memristive Devices |
| 260 | _ | _ | |a Weinheim |c 2015 |b Wiley-VCH |
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| 520 | _ | _ | |a By modification of the electrode–solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2O5/Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta-cation mobility in TaOx. The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted. |
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| 700 | 1 | _ | |a Dimitrakis, Panagiotis |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Valov, Ilia |0 P:(DE-Juel1)131014 |b 5 |e Corresponding author |
| 773 | _ | _ | |a 10.1002/adma.201502574 |g Vol. 27, no. 40, p. 6202 - 6207 |0 PERI:(DE-600)1474949-x |n 40 |p 6202 - 6207 |t Advanced materials |v 27 |y 2015 |x 0935-9648 |
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