000280890 001__ 280890
000280890 005__ 20210129221435.0
000280890 0247_ $$2doi$$a10.1039/C4CP03632H
000280890 0247_ $$2ISSN$$a1463-9076
000280890 0247_ $$2ISSN$$a1463-9084
000280890 0247_ $$2WOS$$aWOS:000346236000039
000280890 037__ $$aFZJ-2016-00601
000280890 041__ $$aEnglish
000280890 082__ $$a540
000280890 1001_ $$0P:(DE-HGF)0$$aSchraknepper, Henning$$b0
000280890 245__ $$aComplex behaviour of vacancy point-defects in SrRuO 3 thin films
000280890 260__ $$aCambridge$$bRSC Publ.$$c2015
000280890 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1453477265_7961
000280890 3367_ $$2DataCite$$aOutput Types/Journal article
000280890 3367_ $$00$$2EndNote$$aJournal Article
000280890 3367_ $$2BibTeX$$aARTICLE
000280890 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000280890 3367_ $$2DRIVER$$aarticle
000280890 520__ $$aThe behaviour of point defects in thin, epitaxial films of the oxide electrode SrRuO3 was probed by means of diffusion measurements. Thin-film SrRuO3 was deposited by means of pulsed laser deposition (PLD) on (100) oriented, undoped single crystal SrTiO3 substrates. 16O/18O exchange anneals were employed to probe the behavior of oxygen vacancies. Anneals were performed in the temperature range 850 ≤ T/K ≤ 1100 at an oxygen partial pressure of pO2 = 500 mbar. Samples were subsequently analyzed by means of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). The measured oxygen isotope penetration profiles comprised, surprisingly, two features. Oxygen tracer diffusion coefficients Image ID:c4cp03632h-t1.gif determined for thin-film SrRuO3 are amongst the lowest measured for nominally undoped perovskite-type oxides. The activation enthalpy of oxygen tracer diffusion was found to be Image ID:c4cp03632h-t2.gif ≈ 2 eV. Diffusion of Ti from the SrTiO3 substrates into the SrRuO3 thin films, probing the cation defects, was also observed in ToF-SIMS profiles; here, too, the diffusion profiles showed two features. The activation enthalpy of titanium diffusion was found to be ΔHDTi ≈ 4 eV. We propose a model–cation sublattice equilibration–that accounts for the appearance of two features in both anion and cation diffusion profiles. We suggest that the observed complex behavior arises from the metastable defect structure of PLD thin films and the unusual defect structure of SrRuO3.
000280890 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000280890 588__ $$aDataset connected to CrossRef
000280890 7001_ $$0P:(DE-Juel1)159254$$aBäumer, Christoph$$b1
000280890 7001_ $$0P:(DE-Juel1)130620$$aDittmann, Regina$$b2
000280890 7001_ $$0P:(DE-HGF)0$$aDe Souza, Roger A.$$b3$$eCorresponding author
000280890 773__ $$0PERI:(DE-600)1476244-4$$a10.1039/C4CP03632H$$gVol. 17, no. 2, p. 1060 - 1069$$n2$$p1060 - 1069$$tPhysical chemistry, chemical physics$$v17$$x1463-9084$$y2015
000280890 8564_ $$uhttps://juser.fz-juelich.de/record/280890/files/c4cp03632h.pdf$$yRestricted
000280890 8564_ $$uhttps://juser.fz-juelich.de/record/280890/files/c4cp03632h.gif?subformat=icon$$xicon$$yRestricted
000280890 8564_ $$uhttps://juser.fz-juelich.de/record/280890/files/c4cp03632h.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000280890 8564_ $$uhttps://juser.fz-juelich.de/record/280890/files/c4cp03632h.jpg?subformat=icon-180$$xicon-180$$yRestricted
000280890 8564_ $$uhttps://juser.fz-juelich.de/record/280890/files/c4cp03632h.jpg?subformat=icon-640$$xicon-640$$yRestricted
000280890 8564_ $$uhttps://juser.fz-juelich.de/record/280890/files/c4cp03632h.pdf?subformat=pdfa$$xpdfa$$yRestricted
000280890 909CO $$ooai:juser.fz-juelich.de:280890$$pVDB
000280890 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)159254$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000280890 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130620$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000280890 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000280890 9141_ $$y2015
000280890 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000280890 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bPHYS CHEM CHEM PHYS : 2014
000280890 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000280890 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000280890 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000280890 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000280890 915__ $$0StatID:(DE-HGF)0400$$2StatID$$aAllianz-Lizenz / DFG
000280890 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000280890 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000280890 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000280890 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000280890 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000280890 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000280890 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000280890 980__ $$ajournal
000280890 980__ $$aVDB
000280890 980__ $$aUNRESTRICTED
000280890 980__ $$aI:(DE-Juel1)PGI-7-20110106