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@ARTICLE{Schraknepper:280890,
      author       = {Schraknepper, Henning and Bäumer, Christoph and Dittmann,
                      Regina and De Souza, Roger A.},
      title        = {{C}omplex behaviour of vacancy point-defects in {S}r{R}u{O}
                      3 thin films},
      journal      = {Physical chemistry, chemical physics},
      volume       = {17},
      number       = {2},
      issn         = {1463-9084},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2016-00601},
      pages        = {1060 - 1069},
      year         = {2015},
      abstract     = {The behaviour of point defects in thin, epitaxial films of
                      the oxide electrode SrRuO3 was probed by means of diffusion
                      measurements. Thin-film SrRuO3 was deposited by means of
                      pulsed laser deposition (PLD) on (100) oriented, undoped
                      single crystal SrTiO3 substrates. 16O/18O exchange anneals
                      were employed to probe the behavior of oxygen vacancies.
                      Anneals were performed in the temperature range 850 ≤ T/K
                      ≤ 1100 at an oxygen partial pressure of pO2 = 500 mbar.
                      Samples were subsequently analyzed by means of
                      Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS).
                      The measured oxygen isotope penetration profiles comprised,
                      surprisingly, two features. Oxygen tracer diffusion
                      coefficients Image ID:c4cp03632h-t1.gif determined for
                      thin-film SrRuO3 are amongst the lowest measured for
                      nominally undoped perovskite-type oxides. The activation
                      enthalpy of oxygen tracer diffusion was found to be Image
                      ID:c4cp03632h-t2.gif ≈ 2 eV. Diffusion of Ti from the
                      SrTiO3 substrates into the SrRuO3 thin films, probing the
                      cation defects, was also observed in ToF-SIMS profiles;
                      here, too, the diffusion profiles showed two features. The
                      activation enthalpy of titanium diffusion was found to be
                      ΔHDTi ≈ 4 eV. We propose a model–cation sublattice
                      equilibration–that accounts for the appearance of two
                      features in both anion and cation diffusion profiles. We
                      suggest that the observed complex behavior arises from the
                      metastable defect structure of PLD thin films and the
                      unusual defect structure of SrRuO3.},
      cin          = {PGI-7},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000346236000039},
      doi          = {10.1039/C4CP03632H},
      url          = {https://juser.fz-juelich.de/record/280890},
}