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@ARTICLE{Telychko:280914,
      author       = {Telychko, Mykola and Mutombo, Pingo and Merino, Pablo and
                      Hapala, Prokop and Ondráček, Martin and Bocquet, François
                      C. and Sforzini, Jessica and Stetsovych, Oleksandr and
                      Vondráček, Martin and Jelínek, Pavel and Švec, Martin},
      title        = {{E}lectronic and {C}hemical {P}roperties of {D}onor,
                      {A}cceptor {C}enters in {G}raphene},
      journal      = {ACS nano},
      volume       = {9},
      number       = {9},
      issn         = {1936-086X},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2016-00625},
      pages        = {9180 - 9187},
      year         = {2015},
      abstract     = {Chemical doping is one of the most suitable ways of tuning
                      the electronic properties of graphene and a promising
                      candidate for a band gap opening. In this work we report a
                      reliable and tunable method for preparation of high-quality
                      boron and nitrogen co-doped graphene on silicon carbide
                      substrate. We combine experimental (dAFM, STM, XPS, NEXAFS)
                      and theoretical (total energy DFT and simulated STM) studies
                      to analyze the structural, chemical, and electronic
                      properties of the single-atom substitutional dopants in
                      graphene. We show that chemical identification of boron and
                      nitrogen substitutional defects can be achieved in the STM
                      channel due to the quantum interference effect, arising due
                      to the specific electronic structure of nitrogen dopant
                      sites. Chemical reactivity of single boron and nitrogen
                      dopants is analyzed using force–distance spectroscopy by
                      means of dAFM.},
      cin          = {PGI-3 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-3-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000361935800056},
      pubmed       = {pmid:26256407},
      doi          = {10.1021/acsnano.5b03690},
      url          = {https://juser.fz-juelich.de/record/280914},
}