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Conference Presentation (Other) FZJ-2016-00689
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Characterization of TaOx Resistive Switching Memory Devices by Scanning Tunneling Microscopy

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2015

European Materials Research Society meeting, BostonBoston, USA, 30 Nov 2015 - 4 Dec 20152015-11-302015-12-04

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015
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 Record created 2016-01-19, last modified 2021-01-29
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