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@ARTICLE{Menzel:281016,
      author       = {Menzel, Stephan and Böttger, Ulrich and Wimmer, Martin and
                      Salinga, Martin},
      title        = {{P}hysics of the {S}witching {K}inetics in {R}esistive
                      {M}emories},
      journal      = {Advanced functional materials},
      volume       = {25},
      number       = {40},
      issn         = {1616-301X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2016-00727},
      pages        = {6306 - 6325},
      year         = {2015},
      abstract     = {Memristive cells based on different physical effects, that
                      is, phase change, valence change, and electrochemical
                      processes, are discussed with respect to their potential to
                      overcome the voltage–time dilemma that is crucial for an
                      application in storage devices. Strongly non-linear
                      switching kinetics are required, spanning more than 15
                      orders of magnitude in time. Temperature-driven and
                      field-driven crystallization, threshold switching, ion
                      migration, as well as redox reactions at interfaces are
                      identified as relevant mechanisms. In phase change materials
                      the combination of a reversible threshold switching and
                      extremely large crystal growth velocities at high voltages
                      enables ultra-fast resistive switching whereas lower
                      voltages will not be sufficient to overcome the energy
                      barrier for crystallization. In electrochemical cells it
                      depends on the voltage regime, which mechanism is the
                      rate-determining one for switching. While
                      electro-crystallization dominates at low voltages, electron
                      transfer in the medium voltage range and a mixture of
                      electron transfer and ion migration at high voltages. In
                      valence change materials, ion migration is found to be
                      accelerated by a combined effect of electric field and local
                      temperature increase due to Joule heating. All discussed
                      types of resistive switches can provide sufficient
                      non-linearity of switching kinetics for overcoming the
                      voltage time dilemma.},
      cin          = {PGI-7},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000363685900003},
      doi          = {10.1002/adfm.201500825},
      url          = {https://juser.fz-juelich.de/record/281016},
}