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@ARTICLE{Breuer:281017,
      author       = {Breuer, Thomas and Siemon, Anne and Linn, Eike and Menzel,
                      Stephan and Waser, Rainer and Rana, Vikas},
      title        = {{A} {H}f{O} 2 -{B}ased {C}omplementary {S}witching
                      {C}rossbar {A}dder},
      journal      = {Advanced Electronic Materials},
      volume       = {1},
      number       = {10},
      issn         = {2199-160X},
      address      = {Chichester},
      publisher    = {Wiley},
      reportid     = {FZJ-2016-00728},
      pages        = {n/a - n/a},
      year         = {2015},
      abstract     = {Rapid growth of future information technology depends on
                      energy-efficient computation and ultra-high density data
                      storage. Non-volatile redox-based resistive switching memory
                      (ReRAM) devices offer logic-in-memory capabilities and can
                      redefine the von Neumann computer architecture. Especially
                      complementary resistive switches (CRSs) enable the
                      integration of highly dense passive nano-crossbar arrays in
                      4F2 structure (F is the minimum feature size) without the
                      need of selector devices. To reduce fabrication complexity
                      further, single ReRAM device in complementary switching (CS)
                      mode is a viable option. Here, the implementation of
                      in-memory-adders using Pt|HfO2|Hf|Pt-based CS devices, which
                      are integrated into 1 × n passive crossbar arrays, is
                      reported. First, the feasibility of all CRS-logic functions
                      with these CS devices is shown, which offer high-endurance
                      (109 cycles) under pulse conditions. Afterward, two
                      multi-bit crossbar adders, the Toggle-Cell Adder and the
                      Pre-Calculation Adder, are experimentally demonstrated under
                      pulse conditions realizing addition and subtraction
                      operations. These results prove the functional efficiency of
                      the crossbar adder approach, paving the path for highly
                      advanced ReRAM-based computing-in-memory architectures.},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000365440700004},
      doi          = {10.1002/aelm.201500138},
      url          = {https://juser.fz-juelich.de/record/281017},
}