TY  - JOUR
AU  - La Torre, Camilla
AU  - Fleck, Karsten
AU  - Starschich, Sergej
AU  - Linn, Eike
AU  - Waser, Rainer
AU  - Menzel, Stephan
TI  - Dependence of the SET switching variability on the initial state in HfO x -based ReRAM
JO  - Physica status solidi / A
VL  - 213
IS  - 3
SN  - 1862-6300
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2016-00729
SP  - 316-319
PY  - 2015
AB  - For any application of redox-based resistive switching devices understanding of variability is of major interest. In this work, we analyze the dependence of the SET switching time in pulse measurements of TiN/HfOx/Pt devices on the initial state before switching. The distribution of the measured SET times covers up to seven decades in one cell. A stochastic as well as a deterministic variability component are identified by relating the initial HRS resistance – obtained from a READ pulse and from the SET pulse for comparison – to the SET time. The different resulting correlations to the SET time for the two descriptions of the initial resistance are analyzed and linked to the polarity and voltage dependence of the HRS. In addition, the origin of the resistance variation is discussed.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000370188700013
DO  - DOI:10.1002/pssa.201532375
UR  - https://juser.fz-juelich.de/record/281018
ER  -