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@INPROCEEDINGS{Fleck:281033,
      author       = {Fleck, K. and Böttger, U. and Waser, R. and Menzel,
                      Stephan},
      title        = {{SET} and {RESET} kinetics in {S}r{T}i{O}3 based resistive
                      memory devices},
      reportid     = {FZJ-2016-00744},
      year         = {2015},
      month         = {Apr},
      date          = {2015-04-20},
      organization  = {European Materials Research Society
                       meeting, San Francisco (USA), 20 Apr
                       2015 - 24 Apr 2015},
      subtyp        = {Other},
      cin          = {PGI-7},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/281033},
}