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@ARTICLE{Moulin:281073,
      author       = {Moulin, Etienne and Bittkau, Karsten and Ghosh, Michael and
                      Bugnon, Grégory and Stuckelberger, Michael and Meier,
                      Matthias and Haug, Franz-Josef and Hüpkes, Jürgen and
                      Ballif, Christophe},
      title        = {{C}omparison of {LPCVD} and sputter-etched {Z}n{O} layers
                      applied as front electrodes in tandem thin-film silicon
                      solar cells},
      journal      = {Solar energy materials $\&$ solar cells},
      volume       = {145},
      issn         = {0927-0248},
      address      = {Amsterdam},
      publisher    = {North Holland},
      reportid     = {FZJ-2016-00778},
      pages        = {185 - 192},
      year         = {2016},
      abstract     = {Aluminum-doped zinc oxide (ZnO:Al) layers deposited by
                      sputtering and boron-doped zinc oxide (ZnO:B) layers
                      deposited by low-pressure chemical vapor deposition (LPCVD)
                      are well-established materials for front electrodes in
                      thin-film silicon solar cells. In this study, both types of
                      front electrodes are evaluated with respect to their
                      inherent properties and their surface textures in micromorph
                      tandem solar cells in the superstrate configuration. The
                      silicon layer stack investigated here consists of a
                      220-nm-thick amorphous silicon top cell, a 40-nm-thick
                      intermediate reflector and a 1.1-µm-thick microcrystalline
                      silicon bottom cell; for this specific silicon layer stack,
                      the LPCVD ZnO:B provides higher power conversion efficiency
                      than its sputtered ZnO:Al counterpart. The growth-friendly
                      surface topography of ZnO:Al yields better electrical
                      performance. However, tandem cells on ZnO:Al suffer from a
                      fundamental optical limitation in terms of light trapping in
                      the top cell. They also show a higher parasitic absorption
                      linked to the relatively high doping concentration of the
                      ZnO:Al layers used here. Detailed analysis of the
                      experimental results allows us to clearly understand the
                      opto-electrical behavior of both types of cells and envisage
                      several possible upgrades to further improve their
                      performance.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000367772400003},
      doi          = {10.1016/j.solmat.2015.09.065},
      url          = {https://juser.fz-juelich.de/record/281073},
}